Optimization of reduced graphene oxide-hematite nanocomposite-based electron transport layer for efficient and stable perovskite solar cells
Abstract
The integration of efficient electron transport layers (ETL) characterized by enhanced charge extraction and minimized recombination losses is essential for improving the performance of perovskite solar cells (PSCs). In this work, we investigated the role of reduced graphene oxide (rGO)-modified hematite (Fe 2 O 3 ) ETLs in PSCs, focusing on the impact of varying rGO concentrations. Reduced graphene oxide (rGO) concentrations from 0.5 wt% to 2 wt% were systematically integrated into the hematite matrix, and their effects on the photovoltaic performance of the composite ETL were examined. The optimized PSC utilizing 1.5 wt% rGO-Fe 2 O 3 as the ETL attained a power conversion efficiency (PCE) of 14.79 %, signifying a 15.95 % improvement relative to the unmodified Fe 2 O 3 -based device (12.52 %). Photoluminescence and transient photovoltage measurements demonstrated improved charge carrier dynamics, with a prolonged carrier lifetime from 53.76 ns (Fe 2 O 3 ) to 65.34 ns (rGO-Fe 2 O 3 ). Furthermore, the rGO-Fe 2 O 3 -based device demonstrated exceptional long-term stability, maintaining 78 % of its initial efficiency after 500 h, in contrast to the 66 % retention observed in the Fe 2 O 3 -only device. The results indicate that a suitable concentration of rGO markedly enhances charge extraction and minimizes recombination, leading to improved photovoltaic performance. This study emphasizes the potential of rGO-modified hematite ETLs as a scalable and effective approach for next-generation PSCs, paving the way for further advancements in hybrid ETL design. • rGO-Fe 2 O 3 ETLs improve electron extraction and reduce recombination in PSCs. • PSCs with 1.5 wt% rGO-Fe 2 O 3 ETL achieve 14.79 % PCE, a 15.95 % increase over Fe 2 O 3 -based devices. • Extended carrier lifetime from 53.76 ns to 65.34 ns enhances charge transport. • rGO-Fe 2 O 3 -based PSCs retain 78 % PCE after 500 h, outperforming Fe 2 O 3 -only devices.