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Works cited by this work

17 works

Work: NDR in Co:SnO <sub>2</sub> Memristors: Nanocluster Control for Enhanced Performance

  1. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

    Ruijing Ge, Xiaohan Wu, Myungsoo Kim +6

    Article20175 citations
    ABI

  2. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    ArticleAdvanced Memory and Neural ComputingEast European Journal of Physics20254 citations
    ABI

  3. Untitled

    Other4 citations
    ABI

  4. Memristive behavior of ZnO/NiO stacked heterostructure

    Rui Zhang, Sh. U. Yuldashev, Jung‐Kyu Lee +3

    Article20132 citations
    ABI

  5. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

    Akihito Sawa, Toshihiro Fujii, M. Kawasaki +1

    Article20042 citations
    ABI

  6. Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

    Thomas Heine

    Article20142 citations
    ABI

  7. Untitled

    Other1 citations
    ABI

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    Other1 citations
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    Other1 citations
    ABI

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    Other1 citations
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    Other1 citations
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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

  17. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    ArticleGa2O3 and related materialsCrystal Growth & Design20251 citations
    ABI