Structural, electronic, and magneto-optical transformations in monocrystalline KDB-3 silicon doped with manganese via high-temperature diffusion
Abstract
In the study, the influence of high-temperature manganese diffusion on the structural and electro-optical properties of monocrystalline KDB-3 silicon was analyzed. The surface morphology changes were investigated using atomic force microscopy, and Hall effect measurements were conducted. A sharp increase in the specific resistance of silicon, by more than three orders of magnitude, was identified after manganese diffusion at 1473 K. A significant decrease in charge carrier concentration and mobility was studied, indicating the formation of electrically active defect complexes involving Mn, B, and O atoms. A temperature-dependent conductivity type transition from p-type to n-type was determined within the range of 250–1250 °C, suggesting a Fermi level shift due to deep manganese states. Resonancelike effects observed in the impedance spectra were established and are presumably linked to localized plasmonic modes. A mechanism involving valence state transitions of manganese (Mn<sup>2+</sup>, Mn<sup>+</sup>, Mn<sup>0</sup>) and the formation of neutral Mn–O complexes at elevated temperatures was formulated. It was proposed that the results enable targeted tuning of silicon's optical and electronic properties for potential applications in spintronic and plasmonic devices. A research direction was developed involving broadband impedance analysis and X-ray diffraction to clarify the nature of the observed effects.