Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field
B. O. IsakovTashkent state technical university, Tashkent, UzbekistanXalmurat M. IliyevTashkent state technical university, Tashkent, UzbekistanZafar B. KhudoynazarovTashkent state technical university, Tashkent, UzbekistanGiyosiddin A. KushievTashkent state technical university, Tashkent, Uzbekistan
ABI
Abstract
In this work, the diffusion of Mn and Ni impurity atoms to p-Si and n-Si samples under the influence of an external electric field was investigated in the temperature range T~800÷1300°C. The research results show that at temperatures above 1000℃, the effective charge of manganese ion has a negative value, and at temperatures below 900℃, the effective charge has a positive value. In the temperature range T=800÷1250°C, nickel ions move in the opposite direction to the current direction of the electric field. The increase in the effective charge with the increase in temperature was explained by the attraction of neutral nickel atoms by electrons.
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