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Works cited by this work

257 works

Work: 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications

  1. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

    Nasir Ilyas, Jinyong Wang, Chunmei Li +7

    Article20213 citations
    ABI

  2. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

    Saima Batool, Muhammad Idrees, Shirui Zhang +2

    Review article20223 citations
    ABI

  3. Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

    Woong Huh, Donghun Lee, Chul‐Ho Lee

    Review article20203 citations
    ABI

  4. Highly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect

    Hai Huang, Jianlu Wang, Weida Hu +13

    Article20163 citations
    ABI

  5. Robust memristors based on layered two-dimensional materials

    Miao Wang, Songhua Cai, Chen Pan +11

    Article20183 citations
    ABI

  6. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

    Mengqi Zeng, Yao Xiao, Jinxin Liu +2

    Review article20183 citations
    ABI

  7. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

    Vinod K. Sangwan, Hong‐Sub Lee, Hadallia Bergeron +4

    Article20183 citations
    ABI

  8. Untitled

    Other3 citations
    ABI

  9. A light-stimulated synaptic device based on graphene hybrid phototransistor

    Shuchao Qin, Fengqiu Wang, Yujie Liu +6

    Article20173 citations
    ABI

  10. Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus

    Taimur Ahmed, Sruthi Kuriakose, Edwin Mayes +5

    Article20193 citations
    ABI

  11. Two-dimensional materials for next-generation computing technologies

    Chunsen Liu, Huawei Chen, Shuiyuan Wang +5

    Review article20203 citations
    ABI

  12. Stimuli‐Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing

    Hongyu Bian, Yi Yiing Goh, Yuxia Liu +3

    Review article20213 citations
    ABI

  13. Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

    Changli Li, Qi Cao, Faze Wang +4

    Review article20183 citations
    ABI

  14. Van der Waals integration before and beyond two-dimensional materials

    Yuan Liu, Yu Huang, Xiangfeng Duan

    Review article20193 citations
    ABI

  15. Memristor with Ag‐Cluster‐Doped TiO<sub>2</sub> Films as Artificial Synapse for Neuroinspired Computing

    Xiaobing Yan, Jianhui Zhao, Sen Liu +4

    Article20173 citations
    ABI

  16. A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping

    Muhammad Waqas Iqbal, Ehsan Elahi, Aliya Amin +4

    Article20203 citations
    ABI

  17. Anomalous Dimensionality‐Driven Phase Transition of MoTe<sub>2</sub> in Van der Waals Heterostructure

    Huije Ryu, Yangjin Lee, Hyun‐Jung Kim +13

    Article20213 citations
    ABI

  18. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

    Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

    ArticleAdvanced Memory and Neural ComputingSensors and Actuators A Physical20252 citations
    ABI

  19. Ultrafast Synaptic Events in a Chalcogenide Memristor

    Yi Li, Yingpeng Zhong, Lei Xu +4

    Article20132 citations
    ABI

  20. Nonvolatile Memory with Multilevel Switching: A Basic Model

    M. J. Rozenberg, Isao Inoue, M. J. Sánchez

    Article20042 citations
    ABI

  21. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

    Krzysztof Szot, W. Speier, Gustav Bihlmayer +1

    Article20062 citations
    ABI

  22. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

    Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee +1

    Article20112 citations
    ABI

  23. Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan, Yanfeng Ji, Na Xiao +13

    Article20172 citations
    ABI

  24. Graphene and Related Materials for Resistive Random Access Memories

    Fei Hui, Enric Grustan‐Gutierrez, Shibing Long +4

    Article20172 citations
    ABI

  25. Deep learning in spiking neural networks

    Amirhossein Tavanaei, Masoud Ghodrati, Saeed Reza Kheradpisheh +2

    Review article20182 citations
    ABI