The influence of rare earth elements on the optical properties of silicon epitaxial films
Sayitova SBerdaq Karakalpak State University, NukusSaparniyazova GKarakalpak Institute of Agriculture and Agricultural Technologies, Nukus, UzbekistanSharibaev M.
Texas Journal of Engineering and Technologyjournal2026
ABI
Abstract
The results of growing erbium-doped silicon epitaxial layers using two different growth modes are presented: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon layer deposited by PFE on a cold substrate and subsequently annealed exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE
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