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Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

M.Yu. TashmetovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. MakhkamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSohibjon EgamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanN.T. SulaymonovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKh.N. DjangabaevDepartment of Semiconductor Physics, Karakalpak State University, Ch. Abdirov Street, Nukus, Uzbekistan
Physica B Condensed Matterjournal2026en
ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell TechnologiesSemiconductor materials and devicesNuclear materials and radiation effects

Identifiers

DOI
10.1016/j.physb.2026.418496

Citations and references

Cited by 025 references
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