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Impedance spectra of rhodium-doped silicon irradiated with alpha particles

Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, UzbekistanD.A. RakhmanovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent, 100057, UzbekistanA.S. DoroshkevichDubna State University, 141982, Dubna, RussiaZh.V. MezentsevaJoint Institute for Nuclear Research, 141980, Dubna, RussiaR.Sh. IsayevJoint Institute for Nuclear Research, 141980, Dubna, RussiaА. TatarinovaImmanuel Kant Baltic Federal University, Kaliningrad, 236041, Russia
Radiation Physics and Chemistryjournal2026en
ABI

Abstract

No abstract available.

Topics

Silicon and Solar Cell TechnologiesAdvanced Energy Technologies and Civil Engineering InnovationsAdvanced Materials and Semiconductor Technologies

Identifiers

DOI
10.1016/j.radphyschem.2026.113893

Citations and references

Cited by 028 references
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