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Works cited by this work

52 works

Work: Enhanced Ni/Cu/n-GaN Schottky junctions via Fe2O3:Bi2O3 nanocomposite interfacial engineering

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Book200639 citations
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  2. A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

    H. Norde

    Article19795 citations
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  3. Extraction of Schottky diode parameters from forward current-voltage characteristics

    S. K. Cheung, N.W. Cheung

    Article19863 citations
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  21. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

    Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

    ArticleSemiconductor materials and interfacesPhysica B Condensed Matter20251 citations
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