Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances
R.R. KabulovPhysical -Technical Institute Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanFarrux AkbarovPhysical -Technical Institute Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanAnvar AlimovTashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
ABI
Abstract
The work is devoted to the study of the influence of solar radiation in the short-wave part of the absorption spectrum at different loading resistances on the lifetime ( ) of minority photogenerated charge carriers (n) of a thin-film solar cell based on Cu(In,Ga)Se 2 . It was found that with an increase in the generated photocurrent and the magnitude of the load resistance the lifetime of minority photogenerated charge carriers of a thin-film solar cell based on Cu(In,Ga)Se 2 increases. The obtained experimental results are interpreted by the charge exchange of defect states, which capture the injected and photogenerated electrons, as a result of which they cease to be active recombination centers.
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