The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures
G. GulyamovNamangan Engineering - Construction Institute, 160103 Namangan, UzbekistanU. I. ErkaboevNamangan Institute of Engineering and Technology,160115 Namangan, UzbekistanN. A. SayidovNamangan Institute of Engineering and Technology,160115 Namangan, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology,160115 Namangan, Uzbekistan
ABI
Abstract
ABSTRACT A theory is constructed of the temperature dependence of quantum oscillation phenomena in narrow-gap electronic semiconductors, taking into account the thermal smearing of Landau levels. Oscillations of longitudinal electrical conductivity in narrow-gap electronic semiconductors at various temperatures are studied. An integral expression is obtained for the longitudinal conductivity in narrow-gap electronic semiconductors, taking into account the diffuse broadening of the Landau levels. A formula is obtained for the dependence of the oscillations of longitudinal electrical conductivity on the band gap of narrow-gap semiconductors. The calculation results are compared with experimental data.
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