Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

Abstract

The band of intrinsic (e–h) radiation emission by the subsurface potential barriers of crystal grains and the edge doublet band arising as LO-phonon replicas of the e–h band are observed in the spectra of the low-temperature (4.2 K) photoluminescence of fine-grained (with a grain size of d cr ≤ 1 µm) CdTe films. Film doping with the In impurity results in quenching of the doublet band, while heat treatment leads to activation of the intrinsic band, a short-wavelength shift of the red boundary (ΔE r = 16–29 meV) and the halfwidth modulation (ΔA = 6–17 meV) of which correlate with the height of micropotential barriers and the temperature of recombining hot photocarriers.

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Identifiers

DOI

10.1134/s1063782616080194

Citations and references