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7 works

Work: Controlled Doping Methods for Radial p/n Junctions in Silicon

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 citations
    ABI

  2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleSemiconductor materials and interfacesEast European Journal of Physics202410 citations
    ABI

  3. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  4. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  7. Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

    Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3

    ArticleNanowire Synthesis and ApplicationsEPJ Web of Conferences20260 citations
    ABI