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Works citing this work

5 works

Work: Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 citations
    ABI

  2. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    ArticleZnO doping and propertiesEast European Journal of Physics20247 citations
    ABI

  3. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

    Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

    ArticleGlass properties and applicationsIOP Conference Series Earth and Environmental Science20201 citations
    ABI

  4. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 citations
    ABI

  5. Study of kinetical laws of process of the catalytic synthesis of nanocarbon from methane

    Kh.N. Kholmirzaeva, N.I. Fayzullayev, A. Abdazimov

    ArticleCatalysis and Oxidation ReactionsE3S Web of Conferences20230 citations
    ABI