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Works cited by this work

11 works

Work: Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Article20109 citations
    ABI

  2. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    ArticleSemiconductor materials and interfacesApplied Solar Energy20166 citations
    ABI

  3. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4

    Article20094 citations
    ABI

  4. Untitled

    Other3 citations
    ABI

  5. Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

    A. Reznitsky, A. A. Klochikhin, M. V. Eremenko

    Article20143 citations
    ABI

  6. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2

    Article20163 citations
    ABI

  7. High-density InSb-based quantum dots emitting in the mid-infrared

    Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5

    Article20063 citations
    ABI

  8. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

    P. Möck, G. R. Booker, N. J. Mason +4

    Article20013 citations
    ABI

  9. Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

    Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev

    Article20163 citations
    ABI

  10. New system of self-assembled GaSb/GaP quantum dots

    D. S. Abramkin, М. А. Putyato, А. К. Гутаковский +3

    Article20122 citations
    ABI

  11. Untitled

    Other1 citations
    ABI