Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4
M. K. BakhadirkhanovTashkent State Technical University, Tashkent, 100095, UzbekistanK. S. AyupovTashkent State Technical University, Tashkent, 100095, UzbekistanG. H. MavlyanovTashkent State Technical University, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, Tashkent, 100095, Uzbekistan
ABI
Abstract
It is experimentally shown that an anomalously high negative magnetoresistance is observed in silicon with manganese-atom complexes [Mn]4 at room temperature. It is established that the negative magnetoresistance has the largest value at T = 230–240 K, while its value decreases with temperature, and the inversion of the magnetoresistance sign takes place at T < 170 K; i.e., the positive magnetoresistance is observed. It is established that the negative magnetoresistance and its temperature dependence are substantially affected by the intensity of both integrated and monochromatic light.
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