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4 works

Work: The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

  1. Features of load current–voltage characteristics of a monocrystalline silicon solar cell at various levels of solar illumination

    R. R. Kabulov, N. A. Matchanov, B. R. Umarov

    ArticlePhotovoltaic Systems and SustainabilityApplied Solar Energy20177 citations
    ABI

  2. Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon

    O. K. Ataboev, R. R. Kabulov, N. A. Matchanov +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20194 citations
    ABI

  3. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    ArticleThin-Film Transistor Technologiesphysica status solidi (a)19900 citations
    ABI

  4. Influence of 1 MeV electron irradiation on the output parameters of silicon heterojunction solar cells

    Sharifa B. Utamuradova, E. I. Terukov, O. K. Ataboev +3

    ArticleSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20250 citations
    ABI