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4 works

Work: Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

  1. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

    G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

    ArticleSemiconductor Quantum Structures and DevicesJournal of Nanomaterials20217 citations
    ABI

  2. Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

    У. И. Эркабоев, R. G. Rakhimov, J. I. Mirzaev +2

    ArticleQuantum and electron transport phenomenaEast European Journal of Physics20245 citations
    ABI

  3. The influence of light on transverse magnetoresistance oscillations in low-dimensional semiconductor structures

    U. I. Erkaboev, G. Gulyamov, M.G. Dadamirzaev +4

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics20243 citations
    ABI

  4. Modeling the temperature dependence of magneto-optical absorption coefficients in nanostructured semiconductors

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    ArticleMagneto-Optical Properties and ApplicationsIndian Journal of Physics20260 citations
    ABI