Works cited by this work

3 works

Work: Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

1. Thermovoltaic processes in gallium arsenide doped with tin

   A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

   ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 citations

   ABIABI:AkademIndex/openalex/2026.other.538373

2. Optical Properties of <i>n</i>-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs

   C. J. Hwang

   Article19692 citations

   ABIABI:AkademIndex/openalex/2026.other.538138

3. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

   E. W. Williams

   Article19682 citations

   ABIABI:AkademIndex/openalex/2026.other.538140