Skip to main content
← Back to work

Works cited by this work

27 works

Work: Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

  1. Positron Annihilation in Semiconductors

    R. Krause‐Rehberg, Hartmut S. Leipner

    Book19996 citations
    ABI
  2. Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal

    N.Yu. Arutyunov, V. V. Emtsev

    Article20053 citations
    ABI
  3. Production of Divacancies and Vacancies by Electron Irradiation of Silicon

    J. W. Corbett, G. D. Watkins

    Article19653 citations
    ABI
  4. Stability of large vacancy clusters in silicon

    Torsten E.M. Staab, A. Sieck, M. Haugk +3

    Article20022 citations
    ABI
  5. Untitled

    Other1 citations
    ABI
  6. Untitled

    Other1 citations
    ABI
  7. Untitled

    Other1 citations
    ABI
  8. Untitled

    Other1 citations
    ABI
  9. Untitled

    Other1 citations
    ABI
  10. Untitled

    Other1 citations
    ABI
  11. Untitled

    Other1 citations
    ABI
  12. Untitled

    Other1 citations
    ABI