Investigation of the influence of external effects on the behavior of gold impurity in silicon
С. З. ЗайнабидиновTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanО. О. МаматкаримовTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanI. G. TursunovTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanУ. А. ТуйчиевTashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan
ABI
Abstract
Properties of gold atoms in silicon and the change of their energy levels under uniform pressure are investigated. The investigations demonstrated that the band gap of silicon varies under the influence of pressure (P) and temperature (T) with a rate ∂E/∂P=−1.5×10−11 eV/Pa and ∂E/∂T=−3.2×10−6 eV/K.