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I. G. Tursunov

13 works

National University of Uzbekistan

  1. Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, О. Химматкулов +1

    ArticleSilicon Nanostructures and PhotoluminescenceUkrainian Journal of Physics20174 citations
    ABI

  2. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    ArticleSemiconductor materials and interfacesSemiconductors20182 citations
    ABI

  3. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleSemiconductor materials and interfacesSemiconductors20202 citations
    ABI

  4. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    ArticleElectromagnetic Effects on MaterialsModern Physics Letters B19981 citations
    ABI

  5. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    ArticleSemiconductor materials and interfacesSemiconductors20001 citations
    ABI

  6. Investigations of the Deep-Level Parameters in Semiconductors

    I. G. Tursunov

    ArticleElectromagnetic Effects on MaterialsUkrainian Journal of Physics20171 citations
    ABI

  7. Dynamic tensor sensitivity of Si samples

    S.Z. Zajnabidinov, Azizbek Abduraimov, O.O. Mamankarimov +3

    ArticleForce Microscopy Techniques and Applications19950 citations
    ABI

  8. The influence of the profile of impurity distribution on the parameters of varactors subjected to full hydrostatic compression

    I. G. Tursunov, B.H. Kuchkarov

    ArticleElectromagnetic Launch and Propulsion TechnologyUzbekiston Fizika Zhurnali20160 citations
    ABI

  9. ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

    I. G. Tursunov, Abdurahim Okhunov, О. О. Маматкаримов

    ArticleAdvanced Materials and Semiconductor TechnologiesIIUM Engineering Journal20180 citations
    ABI

  10. Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleSemiconductor materials and interfacesФизика и техника полупроводников20200 citations
    ABI

  11. Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleAdvanced Materials and Semiconductor TechnologiesPhysics of the Solid State20210 citations
    ABI

  12. INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS

    I. G. Tursunov, M. A. Rakhmanov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignThe American Journal of Interdisciplinary Innovations and Research20240 citations
    ABI

  13. EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

    I. G. Tursunov, M. A. Rakhmanov

    ArticleAdvanced MEMS and NEMS TechnologiesAmerican Journal Of Applied Science And Technology20240 citations
    ABI