Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
С. З. ЗайнабидиновNational University of Uzbekistan, Tashkent, 100174, UzbekistanI. G. TursunovNational University of Uzbekistan, Tashkent, 100174, UzbekistanО. ХимматкуловNational University of Uzbekistan, Tashkent, 100174, Uzbekistan
ABI
Abstract
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.