Article

EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

I. G. TursunovChirchik State Pedagogical University , UzbekistanM. A. RakhmanovChirchik State Pedagogical University , Uzbekistan

American Journal Of Applied Science And Technologyjournal2024en

ABI

Abstract

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.

Topics

Advanced MEMS and NEMS Technologies Silicon and Solar Cell Technologies Advanced Surface Polishing Techniques

Identifiers

DOI: 10.37547/ajast/volume04issue11-03

Citations and references

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