Effect of deep levels on current excitation in 6H-SiC diodes
N.I. KuznetsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RussiaJ. A. EdmondCree Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC, 27713, USA
1997en
ABI
Abstract
The results of an experimental study of deep levels in the p-base of 6H-SiC diodes are presented. A deep level of unknown origin, with ionization energy E c -1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes. A level with ionization energy E c -0.16 eV is attributed to a nitrogen donor impurity. Electron capture and thermal activation processes associated with this level substantially extend the duration of current relaxation in the p-n junction.
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Cited by 30 references