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6 works

Work: Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

  1. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    ArticleChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 citations
    ABI

  2. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

    S.Z. Zaynabidinov, Kh. M. Madaminov

    ArticleIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 citations
    ABI

  3. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20232 citations
    ABI

  4. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 citations
    ABI

  5. Features of a ZnxCd1 – xS Buffer Layer for Use in Thin-Film Solar Cells in the Context of a Literature Review

    R. R. Kabulov

    Review articleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20201 citations
    ABI

  6. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations
    ABI