Works citing this work

4 works

Work: Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

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2. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

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3. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

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4. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

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