Article

On the tensosensitivity of a p-n junction under illumination

G. GulyamovNamangan Engineering–Pedagogical Institute, Namangan, 160103, UzbekistanA. G. GulyamovNamangan Engineering–Pedagogical Institute, Namangan, 160103, Uzbekistan

Semiconductorsjournal2015en

ABI

Abstract

The effect of illumination on the tensosensitivity of a p–n junction is considered. It is shown that the tensosensitivity of an illuminated p–n junction can be controlled by a constant deformation ε0, the frequency of illumination ω, and its intensity I 0. It is established that the absorption coefficient near the critical points can vary greatly under the action of deformation and, hence, the tensosensitivity coefficient of the p–n junction can attain anomalously large values.

Topics

Optical Polarization and Ellipsometry Force Microscopy Techniques and Applications Thermography and Photoacoustic Techniques

Identifiers

DOI: 10.1134/s1063782615060111

Citations and references

Cited by 10 3 references

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