Article

The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

С. З. ЗайнабидиновPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, UzbekistanKh.S. DalievPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, UzbekistanK. P. AbdurakhmanovPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, UzbekistanSharifa B. UtamuradovaPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, UzbekistanI. Kh. KhomidjonovPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, UzbekistanI. A. MirzamurodovPhysics Department, Tashkent State University, Vuzgorodok, Tashkent 700095, Uzbekistan

Modern Physics Letters Bjournal1997en

ABI

Abstract

The influence of gold, platinum, cobalt and nickel impurities on iron atoms behavior in silicon has been studied by complex methods. The additional introducing of one of the named impurities with deep levels (DL) in Fe-doped silicon was proved to reduction of the concentration of interstitial iron ( Fe 0 ). The introducing of gold or nickel shows the strongest effect. The presence of iron in silicon bulk in its turn is shown to decrease the DL concentration connected with Ni, Au, Co and Pt atoms correspondingly. The conclusion is drawn about iron atoms extraction onto the silicon surface in the presence of the second impurity.

Topics

Silicon and Solar Cell Technologies

Identifiers

DOI: 10.1142/s0217984997001110

Citations and references

Cited by 40 references

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