Sensitive thermosensors on the basis of highly compensated silicon
М. К. БахадырхановTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanS. A. ValievTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanS. S. NasriddinovTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanС. А. ТачилинTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of Uzbekistan
ABI
Abstract
The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si〈B,Mn〉 more effectively functions in the region of temperaturesT= 100–400 K, and the thermosensor on the basis of Si〈B,S〉 can be successfully used in the region of more high temperaturesT= 200–450°C.
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