RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE
А. С. СаидовPhysical-Technical Institute, «Physics-Sun» Uzbekistan Academy of SciencesK. A. AmonovPhysical-Technical Institute, «Physics-Sun» Uzbekistan Academy of SciencesAda Yul'evna LeydermanPhysical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences
ABI
Abstract
The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.
Topics
Identifiers
Citations and references
Metrics — AkademScholar · Coming soon