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Works cited by this work

14 works

Work: Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

  1. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20224 citations
    ABI

  2. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source

    Sergey P. Suprun, V. N. Sherstyakova, E. V. Fedosenko

    Article20094 citations
    ABI

  3. Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

    Д. И. Блецкан, J. J. Madyar, V. N. Kabaciy

    Article20063 citations
    ABI

  4. Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

    A. Reznitsky, A. A. Klochikhin, M. V. Eremenko

    Article20143 citations
    ABI

  5. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2

    Article20163 citations
    ABI

  6. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20192 citations
    ABI

  7. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

    ArticleSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 citations
    ABI

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    Other1 citations
    ABI