Conductors crystallization—a condition for synthesizing new dopant compounds
М. С. СаидовScientific Production Association “Physics-Sun,”, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
We examine some possible cases of synthesizing new dopant compounds and their substitution solid solutions by growing crystal layers of Si, Ge, GaSb, CuInSe2 and CdTe, which are of interest for investigating impurity voltaic effects.