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Work: Simulation of 50-nm Gate Graphene Nanoribbon Transistors
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2
ArticleGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 citationsABI