Thermal Stimulation of Photocurrent in p–n Junctions
G. GulyamovNamangan Engineering and Construction Institute, 160103, Namangan, UzbekistanA. G. GulyamovPhysical–Technical Institute, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanУ. И. ЭркабоевNamangan Engineering and Construction Institute, 160103, Namangan, Uzbekistan
ABI
Abstract
The influence of temperature on the impurity photovoltaic effect in a semiconductor p–n junction is considered. It is shown that the filling of impurity levels by electrons transferred from the valence band due to thermal excitation increases photocurrents. The photocurrents due to thermal transitions of electrons from the valence band to acceptor impurity levels are calculated. The results of calculations are compared with experimental data. The obtained formulas explain the experimental results for the p–n junction based on an nGaAs❬Sn❭–pGaAs❬Si2❭–pAl0.65Ga0.35As❬Si2❭ solid solution.