Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms
М. К. БахадырхановTashkent State Technical University, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, Tashkent, 100095, UzbekistanХ. М. ИлиевTashkent State Technical University, Tashkent, 100095, UzbekistanKhayratdin U. KamalovTashkent State Technical University, Tashkent, 100095, Uzbekistan
ABI
Abstract
It is shown that it is possible to considerably increase the lifetime of holes (τ ≈ 103 s) in silicon with multicharged nanoclusters of manganese atoms. It is established that the long lifetime of holes (τ ≈ 100–103 s) is practically retained right up to T = 250 K. Such materials can be used in the development of more effective photoelements and photodetectors of infrared (IR) radiation.