Synergetics of catastrophic failures of semiconductor devices under high-energy ion irradiation
Б. Л. ОксенгендлерInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanF.G. DzhurabekovaHelsinki Institute of Physics and Department of Physics, University of Helsinki, P.O. Box 43, Helsinki, FI-00014, FinlandС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanN.Yu. TuraevInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan
ABI
Abstract
A synergetic theory of the radiation damage of semiconductor equipment is presented. The general approach is applied to explain the failure of the space vehicle “Fobos-Grunt.”