Works citing this work

2 works

Work: A model for the formation of amorphous Si by ion bombardment

1. Backscattering measurements of postimplantation damage profiles in silicon single crystals

   S. Kopta, E. Maydell-Ondrusz, Β. Rajchel

   ArticleCrystallography and Radiation Phenomenaphysica status solidi (a)19780 citations

   ABIABI:AkademIndex/openalex/1978.article.000065

2. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   ArticleSilicon and Solar Cell TechnologiesRadiation effects and defects in solids19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000071