Study of the formation and unimolecular fragmentation of Si n O+ m clusters under ion bombardment
Н. Х. ДжемилевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanС. Ф. КоваленкоInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanО. Ф. ТукфатуллинInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanШ. Т. ХожиевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, Uzbekistan
ABI
Abstract
The dependences of the emission and fragmentation of clusters sputtered by Xe+ ions from the surface of Si n O + on the oxygen pressure near the bombarded surface are studied using secondary ion mass spectrometry. It is shown that the process of Si n O + cluster formation under ion bombardment can be described within the framework of the mechanism of combinatorial synthesis by taking into account the mutual reversibility of the reactions of formation and unimolecular decay.