Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons
M. KаrimovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanSh. MakhkamovUzbek Academy of SciencesSh. A. MakhmudovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanР. А. МуминовPhysicotechnical Institute, Physics-Sun Scientific Production Association, Uzbek Academy of Sciences, Tashkent, UzbekistanA. Z. RakhmatovJSC Foton, Uzbekistan, TashkentL. S. SandlerJSC Foton, Uzbekistan, TashkentА. R. SattievInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanA. A. SulaimanovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Abstract
The possibility of creating photoresistors from silicon of the n-type with specific resistance of 100–170 Ω cm using irradiation by fast neutrons of a nuclear reactor is shown. An optimal regime is found for silicon radiation-heat treatment to obtain photosensitive structures. About tenfold variation in resistance is revealed at illuminance of ∼200 lx.
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