Works citing this work

2 works

Work: Type II heterojunctions in the GaInAsSb/GaSb system

1. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

   T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

   ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000257

2. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

   V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

   ArticleSemiconductor Quantum Structures and DevicesCrystal Research and Technology20020 citations

   ABIABI:AkademIndex/openalex/2002.article.000109