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Work: Growth technique and structural properties of the higher manganese silicide films
The potential of higher manganese silicide as an optoelectronic thin film material
Article20045 citationsABIElectron microscopic investigation of MnSi1.7 layers on Si(001)
Anna Mogilatenko, M. Falke, S. Teichert +3
Article20024 citationsABIStructural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM
Q. Zhang, Masaki Takeguchi, Miyoko Tanaka +1
Article20024 citationsABIPreparation of manganese silicide thin films by solid phase reaction
Jin‐Liang Wang, Masaaki Hirai, M. Kusaka +1
Article19973 citationsABIGrowth of MnSi1.7 on Si(001) by MBE
S. Teichert, S Schwendler, D.K. Sarkar +5
Article20013 citationsABIEpitaxial growth of MnSi1.7 layers in the presence of an Sb flux
Yoshinaga Souno, Yoshihito Maeda, Hirokazu Tatsuoka +1
Article20013 citationsABIMnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
Junling Yang, Nuofu Chen, Zhikai Liu +4
Article20013 citationsABICrystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26
Iwao Kawasumi, Makoto Sakata, Isao Nishida +1
Article19812 citationsABIThermoelectric properties of manganese silicide films
Qiang Hou, Z.M. Wang, Y. J. HE
Article20042 citationsABI