Impurity thermovoltaic solar elements. Possible characteristics and alloying
М. С. СаидовApplied Physics Institute “Physics-Sun” Scientific Production Association of Academy of Sciences of Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
It is shown that the efficiency of impurity thermovoltaic solar elements based on semiconductors with E g = 0.3–1.0 eV may reach about 50%. These elements will be thin-layer structures with strongly alloyed p- and n-layers. The II–VI chemical compounds have been proposed for conducting experimental investigations in the field of germanium alloying and developing germanium-based impurity thermovoltaic solar elements.