Works citing this work

3 works

Work: Epitaxial growth of silicon assisted by ion implantation

1. The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

   L. N. Aeksandrov, A. S. Ltovich, E. D. Blorusets

   ArticleAdvanced Materials Characterization Techniquesphysica status solidi (a)19792 citations

   ABIABI:AkademIndex/openalex/2026.other.605778

2. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   ArticleIon-surface interactions and analysisRadiation Effects19871 citations

   ABIABI:AkademIndex/openalex/1987.article.000061

3. Ion-Molecular Epitaxy

   A. Lyutovich

   ChapterSemiconductor materials and devices19870 citations

   ABIABI:AkademIndex/openalex/1987.chapter.000006