The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts
Abstract
The effect of the field carrier heating on the characteristics of the exclusion currents in intrinsic semiconductors with non-injecting contacts is examined. The relation between the value of the field near the contact and those of the applied voltage and the external illumination intensity is found and shown that this dependence becomes greater with the enhancement of the carrier heating. The temperature dependence of exclusion characteristics is studied and the effect of the illumination and the field heating on exclusion. Moreover, investigations are described of the electrotemperature effects caused by the combined action of light and applied voltage, and specifies the conditions necessary for formation of S- and N-type falling regions in current—voltage characteristics. [Russian Text Ignored.]