Influence of the Growth Parameters in GaAs Vapor Phase Epitaxy
Abstract
The vapor growth of gallium arsenide by the arsenic trichloride transport method has been studied by measurement of the growth rate vs. several growth parameters varied in broad intervals. Thus the influence of the supersaturation of the source and deposition temperature and of the input arsenic trichloride partial pressure has been studied. Growth has mainly been carried out on (100) crystalline planes, with some experiments on (110). The experimental data allows an estimation of the growth possibilities in unusual conditions, namely at low temperature, low supersaturation, and in a broad range of arsenic trichloride partial pressure. In these latter conditions, pure material is obtained at very high growth rates. All the experimental results can be qualitatively explained by a kinetically controlled growth mechanism involving a surface adsorption layer.