Works citing this work

2 works

Work: Influence of the Growth Parameters in GaAs Vapor Phase Epitaxy

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

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   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

   L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

   ArticleOptical Coatings and GratingsRussian Physics Journal19810 citations

   ABIABI:AkademIndex/openalex/1981.article.000119