Works citing this work

3 works

Work: MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

1. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   ArticleSemiconductor materials and interfaces20051 citations

   ABIABI:AkademIndex/openalex/2005.article.000252

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   ArticleSemiconductor materials and interfaces20051 citations

   ABIABI:AkademIndex/openalex/2026.other.609626

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   ArticleSemiconductor materials and interfaces20060 citations

   ABIABI:AkademIndex/openalex/2006.article.000312