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Work: DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

  1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    ArticleThin-Film Transistor TechnologiesMRS Proceedings19980 citations
    ABI

  2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    ArticleSilicon and Solar Cell TechnologiesMRS Proceedings19980 citations
    ABI