Works citing this work

2 works

Work: <i>Ab initio</i>calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   ArticleThin-Film Transistor TechnologiesMRS Proceedings19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   ArticleSilicon and Solar Cell TechnologiesMRS Proceedings19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000320